LAB
A low temperature scanning tunneling microscope operating at 5K and in UHV conditions, based on the commercial Createc LT-STM. System specifications:
– Operating temperature: 5-300 K
– Inorganic/organic deposition in-situ in STM at 8 K
– Sample preparation chamber (sputter gun, gas inlets, annealing up to 1200 K)
– Organic/inorganic MBE growth (100-1200 K)
– LEED/AES
– Residual gas analizyer
A variable temperature scanning tunneling microscope operating between 100K and 400K, based on the commercial Specs STM 150 Aarhus. System specifications:
– Operating temperature: 90-400 K
– Sample preparation chamber (sputter gun, gas inlets, annealing up to 1200 K)
– Organic/inorganic MBE growth (100-1200 K)
– LEED/AES
– Residual gas analizyer
A variable temperature, closed cycle scanning tunneling and force microscope operating between 10K and 400K, based on the commercial RHK PanScan Freedom. System specifications:
– Operating temperature: 10-400 K
– Sample preparation chamber (sputter gun, gas inlets, annealing up to 1200 K)
– Organic/inorganic MBE growth (100-1200 K)
– Residual gas analizyer
ICN2
We combine the local characterization achieved by STM by XPS and ARPES measurements carried out in a common ICN2 facility. The equipment consists on:
– PHOIBOS 150 analyzer from SPECS
– He source + monochromator (He I at 20.2 eV, HeII at 40.8 eV)
– Al and Ag sources (Al Kα at 1487 eV, Ag Lα at 2983 eV)
– Manipulator with a T range from 30-1200 K
– Sample preparation chamber (annealing up to 1000ºC)
– Organic/inorganic MBE growth
– LEED/AES
Other facilities that we use for device fabrication and characterization include:
– micro-Raman/PL (Witec alpha 300)
– Vis-NIR FT-IR
– E-beam lithography
– SEM (FEI Quanta 650F ESEM, FEI Magellan 400L XRSEM)
– Sputter deposition
micro-Raman/PL, FTIR…